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revisions ltr description date (yr-mo-da) approved a add appendix a. -rrp 98-06-09 r. monnin rev sheet rev aaaaaaa sheet 15 16 17 18 19 20 21 rev status rev a a aaaaaaaaaaa a of sheets sheet 1 234567891011121314 pmic n/a prepared by rajesh pithadia defense supply center columbus standard microcircuit drawing checked by rajesh pithadia columbus, ohio 43216 this drawing is available for use by all departments approved by raymond monnin microcircuit, linear, radiation hardened, very low noise quad operational amplifier, monolithic silicon and agencies of the department of defense drawing approval date 98-01-06 amsc n/a revision level a size a cage code 67268 5962-98533 sheet 1 of 21 dscc form 2233 apr 97 5962-e368-98 distribution statement a . approved for public release; distribution is unlimited.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope. this drawing documents two product assurance class levels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha) levels are reflected in the pin. 1.2 pin. the pin is as shown in the following example: 5962 r 98533 01 v x c federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator. device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s). the device type(s) identify the circuit function as follows: device type generic number circuit function 01 hs-op470arh radiation hardened, dielectrically isolated, very low noise, quad, operational amplifier 1.2.3 device class designator. the device class designator is a single letter identifying the product assurance level as follows: device class device requirements documentation m vendor self-certification to the requirements for mil-std-883 compliant, non-jan class level b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-38535 1.2.4 case outline(s). the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style x cdfp3-f14 14 flat pack 1.2.5 lead finish. the lead finish is as specified in mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 3 dscc form 2234 apr 97 1.3 absolute maximum ratings. 1 / voltage between v+ and v- ......................................................................... 40 v differential input voltage .............................................................................. 7 v voltage at either input terminal..................................................................... +v s to -v s peak output current ...................................................................................... indefinite (one ampl ifier shorted to gnd) thermal resistance, junction-to-case ( jc ) ................................................... 30 c/w thermal resistance, junction-to-ambient ( ja ) .............................................. 116 c/w junction temperature (t j ) ............................................................................. +175 c storage temperature range .......................................................................... -65 c to +150 c lead temperature (soldering, 10 seconds)................................................... +275 c 1.4 recommended operating conditions. supply voltage range.................................................................................... 5 v to 15 v input low voltage range ................................................................................ 0 v to +0.8 v common-mode input voltage (v cmin )............................................................ ? (v+ - v-) load resistance (r l )..................................................................................... 2 k ambient operating temperature range (t a )................................................... -55 c to +125 c radiation features: total dose ................................................................................................. > 100 krads (si) latch up .................................................................................................... none 2/ 2. applicable documents 2.1 government specification, standards, and handbooks. the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those liste d in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. mil-std-973 - configuration management. mil-std-1835 - interface standard for microcircuit case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings (smd's). mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specification, standards, and handbooks are available from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 1/ stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2/ guaranteed by process or design.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 4 dscc form 2234 apr 97 2.2 order of precedence. in the event of a conflict between the text of this drawing and the references cited herein, the tex t of this drawing takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements. the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.1.1 microcircuit die. for the requirements for microcircuit die, see appendix a to this document. 3.2 design, construction, and physical dimensions. the design, construction, and physical dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outline(s). the case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections. the terminal connections shall be as specified on figure 1. 3.2.3 timing diagram(s). the timing diagram(s) shall be as specified on figure 2. 3.2.4 radiation exposure circuit. the radiation exposure test connections shall be as specified in table iii. 3.3 electrical performance characteristics and postirradiation parameter limits. unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table i and shall apply over th e full ambient operating temperature range. 3.4 electrical test requirements. the electrical test requirements shall be the subgroups specified in table iia. the electr ical tests for each subgroup are defined in table i. 3.5 marking. the part shall be marked with the pin listed in 1.2 herein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for packages where marking of the entire smd pin number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device classes q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark. the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance. for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). for device class m, a certifica te of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to dscc-va prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes q and v, the requirements of mil-prf-38535 and herein or for device class m, the requirements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance. a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m. for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-std-973.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 5 dscc form 2234 apr 97 table i. electrical performance characteristics. test symbol conditions 1/ -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max input offset voltage v io v cm = 0 v 2/ 1, 3 01 -2.1 2.1 mv 2 -2.6 2.6 m, d, l, r 1 -2.6 2.6 input bias current +i ib v cm = 0 v, 2/ +r s = 10 k , -r s = 100 1 01 -130 130 na 2 -105 105 3 -235 235 m, d, l, r 1 -630 630 -i ib v cm = 0 v, 2/ +r s = 100 , -r s = 10 k 1 -130 130 2 -105 105 3 -235 235 m, d, l, r 1 -630 630 input offset current i io v cm = 0 v, 2/ +r s = 10 k , -r s = 10 k 1 01 -42 42 na 2 -28 28 3 -235 235 m, d, l, r 1 -630 630 see footnotes at end of table.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 6 dscc form 2234 apr 97 table i. electrical performance characteristics - continued. test symbol conditions 1/ -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max large signal voltage gain +a vol v out = 0 v and +10 v, 2/ r l = 2 k 1 01 110 kv/v 2 150 375 m, d, l, r 1 40 -a vol v out = 0 v and -10 v, 2/ r l = 2 k 1 110 2 150 375 m, d, l, r 1 40 common mode rejection ratio +cmrr v+ = 3 v, v- = -27 v, 2/ v cm = +12 v, v out = -12 v 1, 2, 3 01 80 db -cmrr v+ = 27 v, v- = -3 v, 2/ v cm = -12 v, v out = +12 v 80 output voltage swing +v out r l = 2 k , 2/ 1, 2, 3 01 11 v r l = 10 k , 2/ 12 -v out r l = 2 k , 2/ -11 r l = 10 k , 2/ -12 output current +i out v out = -5 v, 2/ 1, 2, 3 01 10 ma m, d, l, r 1 8 -i out v out = +5 v, 2/ 1, 2, 3 -10 m, d, l, r 1 -8 quiescent power supply current +i cc i out = 0 ma, 2/ 1, 2, 3 01 5.5 ma -i cc i out = 0 ma, 2/ 1, 2, 3 -5.5 see footnotes at end of table.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 7 dscc form 2234 apr 97 table i. electrical performance characteristics - continued. test symbol conditions 1/ -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max power supply rejection ratio +psrr v sup = 10 v, 2/ v- = -15 v, v+ = 10 v and 20 v 1, 2, 3 01 80 db -psrr v sup = 10 v, 2/ v+ = 15 v, v- = -10 v and -20 v 1, 2, 3 80 rise and fall time t r v out = 0 v to 200 mv, 3/ 10% t r 90%, see figure 2 4, 5, 6 01 200 ns t f v out = 0 v to -200 mv, 3/ 10% t r 90%, see figure 2 4, 5, 6 200 settling time t s a vcl = -1, 4/, 5 /, 6 / see figure 2 901 6 s quiescent power consumption p c v out = 0 v, i out = 0 ma 4/, 5 /, 7 / 4, 5, 6 01 165 mw slew rate +sr v out = -3 v to +3 v, 3/ see figure 2 4, 5 01 1.7 v/ s 6 1.35 m, d, l, r 4 1.2 -sr v out = +3 v to -3 v, 3/ see figure 2 4, 5 1.7 6 1.35 m, d, l, r 4 1.2 overshoot +os v out = 0 v to 200 mv, 3/ see figure 2 401 45% 5, 6 50 -os v out = 0 v to -200 mv, 3/ see figure 2 445 5, 6 50 differential input resistance r in v cm = 0 v, 4/ 5 / 4 01 250 k input noise voltage density e n r s = 20 , f o = 1000 hz 4/ 5 / 401 6 nv/ hz see footnotes at end of table.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 8 dscc form 2234 apr 97 table i. electrical performance characteristics - continued. test symbol conditions 1/ -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max input noise current density i n r s = 2 m , f o = 1000 hz 4/ 5 / 401 3 pa/ hz full power bandwidth fpbw v pk = 10 v, 4/ 5 / 8 / 4 01 32 khz minimum closed loop stable gain clsg r l = 2 k , c l = 50 pf 4/ 5 / 4, 5, 6 01 1 v/v output resistance r out open loop, 4/ 5 / 4 01 150 channel seperation cs r s = 1 k , a vcl = 100 v/v, v in = 100 mv rms at 10 khz, referenced to input , 4/ 5 / 40190 db 1/ devices supplied to this drawing meet all levels m, d, l and r of irradiation. however, this device is only tested at the r level. pre and post irradiation values are identical unless otherwise specified in table i. when performing post irradiat ion electrical measurements for any rha level, t a = +25 c. 2/ unless otherwise specified, device tested at: supply voltage = 15 v, source resistance (r s ) = 100 , load resistance (r l ) = 100 k , v out = 0 v. 3/ unless otherwise specified, device tested at: supply voltage = 15 v, source resistance (r s ) = 50 , load resistance (r l ) = 2 k , load capacitance (c l ) = 50 pf, a vcl = 1 v/v. 4/ unless otherwise specified, device tested at: supply voltage = 15 v, load resistance (r l ) = 2 k , load capacitance (c l ) = 50 pf, a vcl = 1 v/v. 5/ if not tested, shall be guaranteed to the limits specified in table i herein. 6/ settling time measured from the 90% point of a 10 v input pulse to within 10 mv of the settled value. 7/ quiescent power consumption based upon quiescent supply current test maximum. no load on outputs. 8/ full power bandwidth guarantee based on slew rate measurement using fpbw = slew rate/(2 v pk ).
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 9 dscc form 2234 apr 97 device type 01 case outline x terminal number terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 out 1 -in 1 +in 1 v+ +in2 -in2 out 2 out 3 -in 3 +in 3 v- +in 4 -in 4 out 4 figure 1. terminal connections.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 10 dscc form 2234 apr 97 figure 2. timing diagrams.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 11 dscc form 2234 apr 97 3.9 verification and review for device class m. for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offshore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m. device class m devices covered by this drawing shall be in microcircuit group number 49 (see mil-prf-38535, appendix a). 4. quality assurance provisions 4.1 sampling and inspection. for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening. for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 additional criteria for device class m. a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) t a = +125 c, minimum. b. interim and final electrical test parameters shall be as specified in table iia herein. 4.2.2 additional criteria for device classes q and v. a. the burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer's technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. interim and final electrical test parameters shall be as specified in table iia herein. c. additional screening for device class v beyond the requirements of device class q shall be as specified in mil-prf-38535, appendix b or as modified in the device manufacturers quality management (qm) plan. 4.3 qualification inspection for device classes q and v. qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be performed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4 conformance inspection. technology conformance inspection for classes q and v shall be in accordance with mil-prf-38535 and as specified in qm plan including groups a, b, c, d, and e inspections and as specified herein except where option 2 of mil-prf-38535 permits alternate in-line control testing. quality conformance inspection for device class m shall be in accordance with mil-prf-38535, appendix a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mil-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4).
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 12 dscc form 2234 apr 97 table iia. electrical test requirements. test requirements subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) device class m device class q device class v interim electrical parameters (see 4.2) 1, 4 1, 4 1, 4 final electrical parameters (see 4.2) 1, 2, 3, 4, 1/ 5, 6, 9 1, 2, 3, 4, 1/ 5, 6, 9 1, 2, 3, 1/ 2 / 4, 5, 6, 9 group a test requirements (see 4.4) 1, 2, 3, 4, 5, 6, 9 1,2,3,4,5,6,9 1,2,3,4,5,6,9 group c end-point electrical parameters (see 4.4) 1, 2, 3, 4, 5, 6, 9 1,2,3,4,5,6,9 1,2,3,4,5, 2/ 6, 9 group d end-point electrical parameters (see 4.4) 1, 4 1, 4 1, 4 group e end-point electrical parameters (see 4.4) 1, 4 1, 4 1, 4 1/ pda applies to subgroup 1. for class v to subgroups 1 and . 2/ delta limits (see table iib) shall be required and the delta values shall be computed with reference to the zero hour electrical parameters (see table i). table iib. burn-in and operating life test delta parameters (t a = +25 c). parameters symbol delta limits input offset voltage v io 2 mv input bias current +i ib /-i ib 75 na input offset current i io 75 na table iii. irradiation test connections. (t a = +25 c 5 c, v+ = 15 v 0.5 v, v- = -15 v 0.5 v) test ground v+ v- out to -in (for each op amp) radiation exposure 3, 5, 10, 12 4 11 1 to 2, 7 to 6, 8 to 9, 14 to 13
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 13 dscc form 2234 apr 97 4.4.1 group a inspection. a. tests shall be as specified in table iia herein. b. subgroups 7, 8, 10, and 11 in table i, method 5005 of mil-std-883 shall be omitted. 4.4.2 group c inspection. the group c inspection end-point electrical parameters shall be as specified in table iia herein. 4.4.2.1 additional criteria for device class m. steady-state life test conditions, method 1005 of mil-std-883: a. test condition a, b, c or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q and v. the steady-state life test duration, test condition and test temperat ure, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level control by the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. 4.4.3 group d inspection. the group d inspection end-point electrical parameters shall be as specified in table iia herein. 4.4.4 group e inspection. group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. end-point electrical parameters shall be as specified in table iia herein. b. for device classes q and v, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in mil-prf-38535 for the rha level being tested. for device class m, the devices shall be subjected to radiation hardness assured tests as specified in mil-prf-38535, appendix a for the rha level being tested. all device classes must meet the postirradiation end-point electrical parameter limits as defined in table i at t a = +25 c 5 c, after exposure, to the subgroups specified in table iia herein. 4.4.4.1 total dose irradiation testing. total dose irradiation testing shall be performed in accordance with mil-std-883 method 1019 and as specified herein. 4.4.4.1.1 accelerated aging test. accelerated aging tests shall be performed on all devices requiring a rha level greater than 5k rads(si). the post-anneal end-point electrical parameter limits shall be as specified in table i herein and shall be th e pre-irradiation end-point electrical parameter limit at 25 c 5 c. testing shall be performed at initial qualification and after any design or process changes which may affect the rha response of the device. 4.4.4.2 neutron testing (when required by the customer). neutron testing shall be performed in accordance with test method 1017 of mil-std-883 and herein (see 1.4). all device classes must meet the post irradiation end-point electrical parameter limits as defined in table i, for the subgroups specified in table iia herein at t a = +25 c 5 c.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 14 dscc form 2234 apr 97 4.4.4.3 dose rate induced latchup testing. dose rate induced latchup testing shall be performed in accordance with test method 1020 of mil-std-883 and as specified herein (see 1.4). tests shall be performed on devices, sec, or approved test structures at technology qualification and after any design or process changes which may effect the rha capability of the process. 4.4.4.4 dose rate burnout. when required by the customer, test shall be performed on devices, sec, or approved test structures at technology qualifications and after any design or process changes which may effect the rha capability of the process. dose rate burnout shall be performed in accordance with test method 1023 of mil-std-883 and as specified herein. 5. packaging 5.1 packaging requirements. the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use. microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 replaceability. microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 substitutability. device class q devices will replace device class m devices. 6.2 configuration control of smd's. all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished in accordance with mil-std-973 using dd form 1692, engineering change proposal. 6.3 record of users. military and industrial users should inform defense supply center columbus when a system application requires configuration control and which smd's are applicable to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) should contact dscc-va, telephone (614) 692-0525. 6.4 comments. comments on this drawing should be directed to dscc-va , columbus, ohio 43216-5000, or telephone (614) 692-0674. 6.5 abbreviations, symbols, and definitions. the abbreviations, symbols, and definitions used herein are defined in mil-prf-38535 and mil-hdbk-1331. 6.6 sources of supply. 6.6.1 sources of supply for device classes q and v. sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submitted a certificate of compliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m. approved sources of supply for class m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 15 dscc form 2234 apr 97 appendix a 10. scope 10.1 scope. this appendix establishes minimum requirements for microcircuit die to be supplied under the qualified manufacturers list (qml) program. qml microcircuit die meeting the requirements of mil-prf-38535 and the manufacturers approved qml plan for use in monolithic microcircuits, multichip modules (mcms), hybrids, electronic modules, or devices using chip and wire designs in accordance with mil-prf-38534 are specified herein. two product assurance classes consisting of military high reliability (device class q) and space application (device class v) are reflected in the part or identification number (pin). when available a choice of radiation hardiness assurance (rha) levels are reflected in the pin. 10.2 pin. the pin is as shown in the following example: 5962 r 98533 01 v 9 a federal rha device device die die stock class designator type class code details designator (see 10.2.1) (see 10.2.2) designator (see 10.2.4) \ / (see 10.2.3) \/ drawing number 10.2.1 rha designator. device classes q and v rha identified die shall meet the mil-prf-38535 specified rha levels. a dash (-) indicates a non-rha die. 10.2.2 device type(s). the device type(s) shall identify the circuit function as follows: device type generic number circuit function 01 hs-op470arh radiation hardened, dielectrically isolated, very low noise, quad, operational amplifier 10.2.3 device class designator. device class device requirements documentation q or v certification and qualification to the die requirements of mil-prf-38535
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 16 dscc form 2234 apr 97 appendix a 10.2.4. die details. the die details designation shall be a unique letter which designates the die s physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for ea ch product and variant supplied to this appendix. 10.2.4.1 die physical dimensions. die type figure number 01 a-1 10.2.4.2. die bonding pad locations and electrical functions. die type figure number 01 a-1 10.2.4.3. interface materials. die type figure number 01 a-1 10.2.4.4. assembly related information. die type figure number 01 a-1 10.3. absolute maximum ratings. see paragraph 1.3 within the body of this drawing for details. 10.4 recommended operating conditions. see paragraph 1.4 within the body of this drawing for details.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 17 dscc form 2234 apr 97 appendix a 20. applicable documents. 20.1 government specifications, standards, and handbooks. unless otherwise specified, the following specification, standard, and handbook of the issue listed in that issue of the department of defense index of specifications and standards specified in the solicitation, form a part of this drawing to the extent specified herein. specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. handbook department of defense mil-hdbk-103 - list of standard microcircuit drawings (smd s). (copies of the specification, standard, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity). 20.2. order of precedence. in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 30. requirements 30.1 item requirements. the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer s quality management (qm) plan. the modification in the qm plan shall not effect the form, fit or function as described herein. 30.2 design, construction and physical dimensions. the design, construction and physical dimensions shall be as specified in mil-prf-38535 and the manufacturer s qm plan, for device classes q and v and herein. 30.2.1 die physical dimensions. the die physical dimensions shall be as specified in 10.2.4.1 and on figure a-1. 30.2.2 die bonding pad locations and electrical functions. the die bonding pad locations and electrical functions shall be as specified in 10.2.4.2 and on figure a-1. 30.2.3 interface materials. the interface materials for the die shall be as specified in 10.2.4.3 and on figure a-1. 30.2.4 assembly related information. the assembly related information shall be as specified in 10.2.4.4 and figure a-1. 30.2.5 radiation exposure circuit. the radiation exposure circuit shall be as defined within paragraph 3.2.4. of the body of this document.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 18 dscc form 2234 apr 97 appendix a 30.3 electrical performance characteristics and post-irradiation parameter limits. unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table i of the body of this document. 30.4 electrical test requirements. the wafer probe test requirements shall include functional and parametric testing sufficien t to make the packaged die capable of meeting the electrical performance requirements in table i. 30.5 marking. as a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer s identification and the pin listed in 10.2 herein. the certification mark shall be a qml or q as required by mil-prf-38535. 30.6 certification of compliance. for device classes q and v, a certificate of compliance shall be required from a qml- 38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). the certificate of complian ce submitted to dscc-va prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer s product meets, for device classes q and v, the requirements of mil-prf-38535 and the requirements herein. 30.7 certificate of conformance. a certificate of conformance as required for device classes q and v in mil-prf-38535 shall be provided with each lot of microcircuit die delivered to this drawing. 40. quality assurance provisions 40.1 sampling and inspection. for device classes q and v, die sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer s quality management (qm) plan. the modifications in the qm plan shall not effect the form, fit or function as described herein. 40.2 screening. for device classes q and v, screening shall be in accordance with mil-prf-38535, and as defined in the manufacturer s qm plan. as a minimum it shall consist of: a) wafer lot acceptance for class v product using the criteria defined within mil-std-883 test method 5007. b) 100% wafer probe (see paragraph 30.4). c) 100% internal visual inspection to the applicable class q or v criteria defined within mil-std-883 test method 2010 or the alternate procedures allowed within mil-std-883 test method 5004. 40.3 conformance inspection. 40.3.1 group e inspection. group e inspection is required only for parts intended to be identified as radiation assured (see 30.5 herein). rha levels for device classes q and v shall be as specified in mil-prf-38535. end point electrical testing of packaged die shall be as specified in table iia herein. group e tests and conditions are as specified within paragraphs 4.4.4.1 , 4.4.4.1.1., 4.4.4.2, 4.4.4.3, and 4.4.4.4. 50. die carrier 50.1 die carrier requirements. the requirements for the die carrier shall be in accordance with the manufacturer s qm plan or as specified in the purchase order by the acquiring activity. the die carrier shall provide adequate physical, mechanical an d electrostatic protection.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 19 dscc form 2234 apr 97 appendix a 60 notes 60.1 intended use. microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with mil-prf-38535 or mil-prf-38534 for government microcircuit applications (original equipment), design applications and logistics purposes. 60.2 comments. comments on this appendix should be directed to dscc-va, columbus, ohio, 43216-5000 or telephone (614)-692-0536. 60.3 abbreviations, symbols and definitions. the abbreviations, symbols, and definitions used herein are defined within mil-prf-38535 and mil-std-1331. 60.4 sources of supply for device classes q and v. sources of supply for device classes q and v are listed in qml-38535. the vendors listed within qml-38535 have submitted a certificate of compliance (see 30.6 herein) to dscc-va and have agreed to this drawing.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 20 dscc form 2234 apr 97 appendix a note: pad numbers reflect terminal numbers when placed in case outline x (see figure 1). figure a-1. die bonding pad locations and electrical functions.
standard microcircuit drawing size a 5962-98533 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 21 dscc form 2234 apr 97 appendix a die physical dimensions. die size: 2420 x 2530 microns die thickness: 19 1 mils interface materials. top metallization: alcu 16.0 k 2 k backside metallization: none. glassivation. type: nitride over silox (sio 2 , 5% phos) thickness: silox: 12 k 2.0 k nitride: 3.5 k 1.5 k substrate: dielectric isolation (di) silicon assembly related information. substrate potential: unbiased special assembly instructions: none figure a-1. die bonding pad locations and electrical functions - continued.
standard microcircuit drawing bulletin date: 98-06-09 approved sources of supply for smd 5962-98533 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by dscc-va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535. standard microcircuit drawing pin 1/ vendor cage number vendor similar pin 2/ 5962r9853301vxc 34371 hs9-op470arh-q 5962R9853301V9A 34371 hs0-op470arh-q 1/ the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2/ caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. vendor cage vendor name number and address 34371 harris semiconductor po box 883 melbourne, fl 32902-0883 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin.

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